Preparation method of restructured surface of low-defect large-area silicon (100)-2xl

The invention provides a preparation method of the restructured surface of a low-defect large-area silicon (100)-2xl. The preparation method is characterized by comprising the following steps of: firstly, breaking down a silicon (100) sample by a direct-current power supply; secondly, cleaning the surface of the silicon; thirdly, growing a silver layer with the thickness of 0.5 nanometer on the surface of the cleaned silicon by a molecular beam deposition technology; fourthly, evenly distributing a plurality of silver atoms on the surface of the Si sample; and fifthly, quickly warming the sample to 1200 DEG C, so that all the silver atoms are removed and absorbed, and the restructured surface of the low-defect large-area silicon (100)-2xl can be prepared. The preparation method has the technical effects that: 1, when the restructured surface of the silicon (100)-2xl is prepared, the problem of the sample fracture caused by the overquick heating is avoided by adopting a step type cleaning method in a heating w