Transistor combining transient voltage suppressor diode with schottky diode
The invention discloses a transistor combining a transient voltage suppressor diode with a schottky diode. Two pole lead wires of a transient voltage suppressor diode chip and a schottky diode chip are connected in parallel and then are packaged into a body to form a novel diode transistor. The tran...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The invention discloses a transistor combining a transient voltage suppressor diode with a schottky diode. Two pole lead wires of a transient voltage suppressor diode chip and a schottky diode chip are connected in parallel and then are packaged into a body to form a novel diode transistor. The transistor has the advantages that lots of space of down-stream products can be saved, the repeated product production is avoided, the loading speed is increased, the production efficiency is improved, and meanwhile the production cost is reduced. |
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