Method for growing high-indium InGaAs (indium gallium arsenic)

The invention discloses a method for growing high-indium InGaAs (indium gallium arsenic), and relates to the application field of electronic materials and devices, which solves the problems that in the traditional InxGal-xAs infrared detector, as the indium component in InxGal-xAs is increased to cause lattice mismatch with the InP substrate, the performance of the detector is reduced, and the thickness of a buffer layer is increased. The method comprises the following steps of: growing an InxGal-xAs buffer layer at the low temperature of 430 Deg C, then rising the temperature and carrying out constant-temperature treatment on the buffer layer at a high temperature; and then growing an InxGal-xAs epitaxial layer at the high temperature to obtain a high-indium InGaAs material. In the method, the thickness of the buffer layer is reduced, the growing time is shortened, and the quality of the epitaxial layer is improved.