Gas supply member and plasma processing device

A gas supply member (11) includes an annular section (12) having an annularly extending gas flow path provided inside the annular section. The annular section (12) is provided with an annular first member (13a) including a flat plate section (18) having gas supply holes (19) formed in the flat plate...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	MIHARA NAOKI, SUDOU KENJI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A gas supply member (11) includes an annular section (12) having an annularly extending gas flow path provided inside the annular section. The annular section (12) is provided with an annular first member (13a) including a flat plate section (18) having gas supply holes (19) formed in the flat plate section, and also with an annular second member (13b) for forming a space (14), which is the gas flow path, between the second member (13b) and the first member (13a).