Secondary inversion peak absorption circuit
The invention discloses a secondary inversion peak absorption circuit. One end of an electrolytic capacitor is connected with the anode of a DC (Direct Current) bus; the other end of the electrolytic capacitor is connected with the anode end of a diode; the cathode of the diode is connected with the...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a secondary inversion peak absorption circuit. One end of an electrolytic capacitor is connected with the anode of a DC (Direct Current) bus; the other end of the electrolytic capacitor is connected with the anode end of a diode; the cathode of the diode is connected with the cathode of the DC bus; an emitter of an IGBT (Insulated Gate Bipolar Transistor) is connected with between the electrolytic capacitor and the diode; a collector of the IGBT is connected with a resistor which is connected with the anode of the DC bus; a grid of the IGBT is connected with a 7th pin of a comparator, a 5th pin of the comparator is connected with the anode of the DC bus, and a 6th pin of the comparator is connected with a set voltage. The invention has a reasonable structure and can effectively limit the peak voltage in a safe range. |
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