Method for improving roughness of line edge of photoetching pattern in semiconductor process

The invention provides a method for improving the roughness of the line edge of a photoetching pattern in a semiconductor process, which comprises the following steps of: coating photoresist on a semiconductor layer on which the pattern is needed to be formed; exposing and developing the photoresist...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	SHI YUNZE, SONG HUALONG, SHEN YIHUA, TU HUOJIN, LI LIANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The invention provides a method for improving the roughness of the line edge of a photoetching pattern in a semiconductor process, which comprises the following steps of: coating photoresist on a semiconductor layer on which the pattern is needed to be formed; exposing and developing the photoresist to form the photoresist with the pattern; performing ion implantation on the photoresist with the pattern to form a hard mask; and etching the semiconductor layer by taking the hard mask as a mask. By the method, the roughness of the line edge of the pattern can be improved obviously; and the method has a simple process and is low in cost.