Laser crystal, growth device and method thereof and laser working element prepared from crystal

The invention discloses a thulium/holmium-doped yttrium aluminum garnet crystal, a growth device and method for preparing the crystal and a laser working element prepared from the crystal. The chemical formula of the crystal is Tm, Ho: Y3Al5O12, and the crystal is a cubic one of which the space grou...

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Bibliographische Detailangaben
Hauptverfasser:	HUANG RONG, HUANG MEISONG, WANG ZHIJIAN, WU YE, YU QIANGGUO, CAI GANGFENG, GAO YANA, WENG GUOQING, LU XIAOCHUN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention discloses a thulium/holmium-doped yttrium aluminum garnet crystal, a growth device and method for preparing the crystal and a laser working element prepared from the crystal. The chemical formula of the crystal is Tm, Ho: Y3Al5O12, and the crystal is a cubic one of which the space group is Ia3d, wherein the thulium doping concentration is 1.99-2.0110 /cm , and the holmium doping concentration is 5.00-5.0510 /cm . The crystal provided by the invention solves the problems of short service life of the existing crystal, and small diameter, short service life, uneven optical quality and high cracking possibility of the blank. The laser working element prepared from the crystal solves the defects of small dimension and instable performance of the existing working element.