Method for preparing metal doping zinc oxide base films

The invention relates to the field of preparation of semiconductor materials, in particular to a method for preparing metal doping zinc oxide base films, which is characterized in that the method comprises the follow steps: placing a cleaned substrate into a magnetron sputtering device chamber, pumping vacuum in a reaction chamber to an ultra-high vacuum state, adopting ultra-high-purity metal and high-purity zinc oxide as raw material targets, and realizing cosputtering film coating of the two targets; using gas obtained through mixing argon gas and high-purity oxygen according to a certain proportion as sputtering gas and reaction gas, inputting the gas into the reaction chamber through controlling the flow rate of a flow meter, and carrying out sputtering growth; and carrying out annealing treatment on the prepared films in the vacuum environment. The method has the advantages that the technical process of uniformly doping the zinc oxide is simplified, the development cost is reduced, and in addition, the