Method for manufacturing silicon through hole

The invention discloses a method for manufacturing a silicon through hole. A dielectric layer is deposited on the surface of a silicon wafer; and before a metal interconnection process is started, the method comprises the following steps of: depositing an etching barrier layer on the surface of the dielectric layer; forming a photoresist pattern to be etched on the etching barrier layer, and etching the etching barrier layer and the dielectric layer on a region which is not protected by the photoresist pattern; removing the photoresist pattern; etching a silicon substrate under the protection of the etching barrier layer so as to obtain the silicon through hole; and removing the etching barrier layer. By the method, the influence of the manufacturing process of the silicon through hole on the dielectric layer can be avoided.