Thin film transistor and manufacturing method thereof

The invention discloses a thin film transistor and a manufacturing method thereof. The manufacturing method of the thin film transistor comprises the following steps of: firstly, forming an insulating pattern layer with at least one raised part on a base plate; next, forming at least one spacing wall and a plurality of separated noncrystal semiconductor patterns on the insulating pattern layer, wherein the spacing wall is formed at one side of the raised part and connected among the noncrystal semiconductor patterns; then crystallizing the spacing wall and the noncrystal semiconductor patterns; removing the raised part and the insulating pattern layer below the spacing wall so that the spacing wall is suspended on the base plate to form a beam structure with a plurality of corner parts; and then sequentially forming a carrier tunneling layer, a carrier catching layer and a carrier blocking layer for correspondingly coating the corner parts of the beam structure; and finally, forming a gate on the base plate,