High voltage level shift circuit
The invention discloses a high voltage level shift circuit. The invention provides a high voltage level shift circuit, comprising a pulse generating circuit, a pulse rectification circuit, a first offset circuit, a clamping circuit, an LDMOS (laterally diffused metal oxide semiconductor) transistor,...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a high voltage level shift circuit. The invention provides a high voltage level shift circuit, comprising a pulse generating circuit, a pulse rectification circuit, a first offset circuit, a clamping circuit, an LDMOS (laterally diffused metal oxide semiconductor) transistor, a second offset circuit, a filter circuit and a signal restoring circuit, aiming at solving the problems that the existing high voltage level shift circuit can not reduce circuit layout area simultaneously and the output initial state of the circuit is unstable. Compared with the existing high voltage level shift circuit adopting two LDMOS transistors, the high voltage level shift circuit disclosed by the invention adopts only one LDMOS transistor, thus reducing the circuit layout area; meanwhile the signal restoring circuit is utilized to solve the problem that the output initial state of the high voltage level shift circuit is unstable, thus realizing the function of correctly outputtinga level shift signal whil |
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