Method for removing photoresist
The invention discloses a method for removing photoresist. The method comprises the following steps: providing a substrate which comprises patterned photoresist; carrying out ion implantation on the substrate; carrying out non-oxidation pretreatment on the substrate, wherein the treatment conditions...
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| creator | JIAN JINCHENG XU SHAOHUA YE QIUXIAN WANG ZHIJIAN CHEN XINQI YANG JIANLUN XU ZHEHUA CHEN ZHENGGUO LI ZHICHENG |
| description | The invention discloses a method for removing photoresist. The method comprises the following steps: providing a substrate which comprises patterned photoresist; carrying out ion implantation on the substrate; carrying out non-oxidation pretreatment on the substrate, wherein the treatment conditions of hydrogen, carrier gas and plasma are provided during the non-oxidation pretreatment; and stripping the photoresist from the substrate, thereby completely removing the photoresist. The method can be used for smoothly removing the photoresist material layer on the premise of considering the integrity of the polysilicon circuit on the substrate. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN102043355A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN102043355A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN102043355A3</originalsourceid><addsrcrecordid>eNrjZJD3TS3JyE9RSMsvUihKzc0vy8xLVyjIyC_JL0otziwu4WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hgZGBibGxqamjsbEqAEAQxIlJw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for removing photoresist</title><source>esp@cenet</source><creator>JIAN JINCHENG ; XU SHAOHUA ; YE QIUXIAN ; WANG ZHIJIAN ; CHEN XINQI ; YANG JIANLUN ; XU ZHEHUA ; CHEN ZHENGGUO ; LI ZHICHENG</creator><creatorcontrib>JIAN JINCHENG ; XU SHAOHUA ; YE QIUXIAN ; WANG ZHIJIAN ; CHEN XINQI ; YANG JIANLUN ; XU ZHEHUA ; CHEN ZHENGGUO ; LI ZHICHENG</creatorcontrib><description>The invention discloses a method for removing photoresist. The method comprises the following steps: providing a substrate which comprises patterned photoresist; carrying out ion implantation on the substrate; carrying out non-oxidation pretreatment on the substrate, wherein the treatment conditions of hydrogen, carrier gas and plasma are provided during the non-oxidation pretreatment; and stripping the photoresist from the substrate, thereby completely removing the photoresist. The method can be used for smoothly removing the photoresist material layer on the premise of considering the integrity of the polysilicon circuit on the substrate.</description><language>chi ; eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110504&DB=EPODOC&CC=CN&NR=102043355A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110504&DB=EPODOC&CC=CN&NR=102043355A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JIAN JINCHENG</creatorcontrib><creatorcontrib>XU SHAOHUA</creatorcontrib><creatorcontrib>YE QIUXIAN</creatorcontrib><creatorcontrib>WANG ZHIJIAN</creatorcontrib><creatorcontrib>CHEN XINQI</creatorcontrib><creatorcontrib>YANG JIANLUN</creatorcontrib><creatorcontrib>XU ZHEHUA</creatorcontrib><creatorcontrib>CHEN ZHENGGUO</creatorcontrib><creatorcontrib>LI ZHICHENG</creatorcontrib><title>Method for removing photoresist</title><description>The invention discloses a method for removing photoresist. The method comprises the following steps: providing a substrate which comprises patterned photoresist; carrying out ion implantation on the substrate; carrying out non-oxidation pretreatment on the substrate, wherein the treatment conditions of hydrogen, carrier gas and plasma are provided during the non-oxidation pretreatment; and stripping the photoresist from the substrate, thereby completely removing the photoresist. The method can be used for smoothly removing the photoresist material layer on the premise of considering the integrity of the polysilicon circuit on the substrate.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJD3TS3JyE9RSMsvUihKzc0vy8xLVyjIyC_JL0otziwu4WFgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hgZGBibGxqamjsbEqAEAQxIlJw</recordid><startdate>20110504</startdate><enddate>20110504</enddate><creator>JIAN JINCHENG</creator><creator>XU SHAOHUA</creator><creator>YE QIUXIAN</creator><creator>WANG ZHIJIAN</creator><creator>CHEN XINQI</creator><creator>YANG JIANLUN</creator><creator>XU ZHEHUA</creator><creator>CHEN ZHENGGUO</creator><creator>LI ZHICHENG</creator><scope>EVB</scope></search><sort><creationdate>20110504</creationdate><title>Method for removing photoresist</title><author>JIAN JINCHENG ; XU SHAOHUA ; YE QIUXIAN ; WANG ZHIJIAN ; CHEN XINQI ; YANG JIANLUN ; XU ZHEHUA ; CHEN ZHENGGUO ; LI ZHICHENG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN102043355A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2011</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>JIAN JINCHENG</creatorcontrib><creatorcontrib>XU SHAOHUA</creatorcontrib><creatorcontrib>YE QIUXIAN</creatorcontrib><creatorcontrib>WANG ZHIJIAN</creatorcontrib><creatorcontrib>CHEN XINQI</creatorcontrib><creatorcontrib>YANG JIANLUN</creatorcontrib><creatorcontrib>XU ZHEHUA</creatorcontrib><creatorcontrib>CHEN ZHENGGUO</creatorcontrib><creatorcontrib>LI ZHICHENG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JIAN JINCHENG</au><au>XU SHAOHUA</au><au>YE QIUXIAN</au><au>WANG ZHIJIAN</au><au>CHEN XINQI</au><au>YANG JIANLUN</au><au>XU ZHEHUA</au><au>CHEN ZHENGGUO</au><au>LI ZHICHENG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for removing photoresist</title><date>2011-05-04</date><risdate>2011</risdate><abstract>The invention discloses a method for removing photoresist. The method comprises the following steps: providing a substrate which comprises patterned photoresist; carrying out ion implantation on the substrate; carrying out non-oxidation pretreatment on the substrate, wherein the treatment conditions of hydrogen, carrier gas and plasma are provided during the non-oxidation pretreatment; and stripping the photoresist from the substrate, thereby completely removing the photoresist. The method can be used for smoothly removing the photoresist material layer on the premise of considering the integrity of the polysilicon circuit on the substrate.</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | Method for removing photoresist |
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