Method for removing photoresist

The invention discloses a method for removing photoresist. The method comprises the following steps: providing a substrate which comprises patterned photoresist; carrying out ion implantation on the substrate; carrying out non-oxidation pretreatment on the substrate, wherein the treatment conditions...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	JIAN JINCHENG, XU SHAOHUA, YE QIUXIAN, WANG ZHIJIAN, CHEN XINQI, YANG JIANLUN, XU ZHEHUA, CHEN ZHENGGUO, LI ZHICHENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The invention discloses a method for removing photoresist. The method comprises the following steps: providing a substrate which comprises patterned photoresist; carrying out ion implantation on the substrate; carrying out non-oxidation pretreatment on the substrate, wherein the treatment conditions of hydrogen, carrier gas and plasma are provided during the non-oxidation pretreatment; and stripping the photoresist from the substrate, thereby completely removing the photoresist. The method can be used for smoothly removing the photoresist material layer on the premise of considering the integrity of the polysilicon circuit on the substrate.