Semiconductor device
Provided is a semiconductor device in which the first trench isolation regions is placed between a substrate potential-fixing P-type diffusion region of an ESD protection NMOS transistor and source and drain regions of the ESD protection NMOS transistor, and has a depth greater than a depth of the s...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | Provided is a semiconductor device in which the first trench isolation regions is placed between a substrate potential-fixing P-type diffusion region of an ESD protection NMOS transistor and source and drain regions of the ESD protection NMOS transistor, and has a depth greater than a depth of the second trench isolation region that is placed between a substrate potential-fixing P-type diffusion region of an NMOS transistor for internal circuit and source and drain regions of the NMOS transistor for internal circuit. |
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