Method for forming metallic electrode of semiconductor device and metallic electrode forming device

The invention discloses a method for forming a metallic electrode (15) of a semiconductor device (10). The method comprises obtaining surface shape data of the surface part (11c) of a semiconductor substrate (11), and deforming the semiconductor substrate (11) with the deformation devices (24, 24a)...

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Bibliographische Detailangaben
Hauptverfasser:	TOMISAKA MANABU, AKAMATSU KAZUO, TAI AKIRA, FUKUDA YUTAKA, KATOU HIDETOSHI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TESTING
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Beschreibung
Zusammenfassung:	The invention discloses a method for forming a metallic electrode (15) of a semiconductor device (10). The method comprises obtaining surface shape data of the surface part (11c) of a semiconductor substrate (11), and deforming the semiconductor substrate (11) with the deformation devices (24, 24a) based on the data to make the distance between a cutting plane (P) and a surface part (11c) fit into a cutting precision scope required. During deformation of the semiconductor substrate (11), a plurality of actuator (24 a) serve as deformation devices (24, 24a). The distance between actuator (24 a) is large than half of the wavelength of the distributive spatial frequency of the thickness of the semiconductor substrate (11) and is smaller or equals to the wavelength.