Optoelectronic semiconductor device
An optoelectronic semiconductor device in accordance with an embodiment of present invention includes a conversion unit having a first side; an electrical connector; a contact layer, an outer perimeter between the conversion unit and the electrical connector, wherein the contact layer has at least t...
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | An optoelectronic semiconductor device in accordance with an embodiment of present invention includes a conversion unit having a first side; an electrical connector; a contact layer, an outer perimeter between the conversion unit and the electrical connector, wherein the contact layer has at least three successive discontinuous-regions formed along the outer perimeter and having at least one different factor; wherein the electrical connector, the contact layer, and the discontinuous-regions are formed on the first side of the conversion unit. |
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