Bridge type nano grating tunable vertical cavity surface emitting laser and preparation method thereof

The invention relates to a surface nano grating-based wavelength tunable vertical cavity surface emitting laser and a preparation method, which belong to the field of semiconductor photoelectronic devices. The laser has an inner cavity contact laminated structure; a positive electrode layer (1) is a...

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Bibliographische Detailangaben
Hauptverfasser: HAO CONGXIA, GUO XIA, LI SHUO, REN XIUJUAN, LI CHUANCHUAN, GUAN BAOLU
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention relates to a surface nano grating-based wavelength tunable vertical cavity surface emitting laser and a preparation method, which belong to the field of semiconductor photoelectronic devices. The laser has an inner cavity contact laminated structure; a positive electrode layer (1) is arranged on a P-type ohmic contact layer (5); an air-gap layer (12), a gallium arsenide layer (2a), and a gallium aluminum arsenide layer (2b) are arranged above the ohmic contact layer (5) in turn; a gallium aluminum arsenide oxidation current limitation layer (6), an active region (7), an n-type gallium aluminum arsenide layer (8a), an n-type gallium arsenide (8b), an n-type gallium arsenide substrate (10), and a substrate electrode layer (11) are formed below the ohmic contact layer (5) in turn; and a nano grating (15) is positioned on the surface of the gallium arsenide layer (2a). The thickness of the air-gas layer can be subjected to mechanical adjustment of an electrostatic force and the like, so that photon