High-resistance value metal oxide film resistor and manufacture method thereof

The invention relates to the technical fields of electronic components and semiconductors, in particular to a high-resistance value metal oxide film resistor and a manufacture method thereof. The high-resistance value metal oxide film resistor comprises a ceramic matrix, a skin membrane, iron caps and a lead, wherein the skin membrane is formed on the ceramic matrix; the iron caps are positioned in both ends of the ceramic matrix; the skin membrane comprises an inner-layer skin membrane and an outer-layer skin membrane; the inner-layer skin membrane is formed by a target material through vacuum direct current sputtering; and the outer-layer skin membrane is formed by a target material through an ion power supply and radio-frequency sputtering. In the invention, a unique double-layer membrane structure resistor body is manufactured, and the outer-layer skin membrane is a layer of dense metal oxide film actually, has favorable protecting effect on the inner-layer skin membrane and prevents the inner-layer skin