Water-rich stripping and cleaning formulation and method for using same

The invention relates to water-rich formulations which are used to remove bulk photoresists, post-etched and post-ashed residues, residues from A1 back-end-of-the-line interconnect structures, and contaminants and a method for using the same. The formulation comprises: hydroxylamine; corrosion inhib...

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Bibliographische Detailangaben
Hauptverfasser: LEE YIIA, WU AIPING, BANERJEE GAUTAM, RAO MADHUKAR BHASKARA, WIEDER THOMAS MICHAEL, LIU WEN DAR
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention relates to water-rich formulations which are used to remove bulk photoresists, post-etched and post-ashed residues, residues from A1 back-end-of-the-line interconnect structures, and contaminants and a method for using the same. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or a combination of the two; and at least 50% by weight of water.