Substrate structures and methods of manufacturing the same
A substrate structure is manufactured by forming a protrusion area (21) of a substrate under a buffer layer (22), and forming a semiconductor layer (23) on the buffer layer, thereby separating the substrate from the buffer layer except in an area where the protrusion is formed. The semiconductor lay...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A substrate structure is manufactured by forming a protrusion area (21) of a substrate under a buffer layer (22), and forming a semiconductor layer (23) on the buffer layer, thereby separating the substrate from the buffer layer except in an area where the protrusion is formed. The semiconductor layer on the buffer layer not contacting the substrate has freestanding characteristics, and dislocation or cracks may be reduced and/or prevented. |
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