Thin film transistor, production method thereof and pixel structure

The invention relates to a thin film transistor, a production method thereof and a pixel structure. The production method comprises the steps of providing a base plate, wherein a grid electrode, an insulating layer and a channel layer are formed on the base plate, and a conducting layer is formed on...

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Hauptverfasser: WU HUANGJUN, ZENG XIANKAI
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creator WU HUANGJUN
ZENG XIANKAI
description The invention relates to a thin film transistor, a production method thereof and a pixel structure. The production method comprises the steps of providing a base plate, wherein a grid electrode, an insulating layer and a channel layer are formed on the base plate, and a conducting layer is formed on the base plate to cover the channel layer and the insulating layer; forming a photoresist layer on the conducting layer; arranging a photo mask above the photoresist layer, wherein the photoresist layer comprises a data line pattern, a source electrode pattern and a drain electrode pattern, a first width (W1) is reserved between the source electrode pattern and the drain electrode pattern, the data line pattern has a second width (W2), the first width (W1) and the second width (W2) meet the conditional that if W1-1(um), then W2+a(um), and a is larger than 0.3 and less than 0.7; carrying out an exposure program and a development program to pattern the photoresist layer by utilizing the photo mask; and patterning th
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN101944487A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN101944487A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN101944487A3</originalsourceid><addsrcrecordid>eNqNyrEKwjAQANAsDqL-w7krWAxYRwmKk1P3EpoLCaR34XIFP18HP8DpLW9t3JAyQcxlBhVPLTdlOUAVDsukmQlm1MQBNKEgR_AUoOY3Fmgq37IIbs0q-tJw93Nj9o_74J5HrDxiq35CQh3dqzt1V2ttf7md_zkfraIy8Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Thin film transistor, production method thereof and pixel structure</title><source>esp@cenet</source><creator>WU HUANGJUN ; ZENG XIANKAI</creator><creatorcontrib>WU HUANGJUN ; ZENG XIANKAI</creatorcontrib><description>The invention relates to a thin film transistor, a production method thereof and a pixel structure. The production method comprises the steps of providing a base plate, wherein a grid electrode, an insulating layer and a channel layer are formed on the base plate, and a conducting layer is formed on the base plate to cover the channel layer and the insulating layer; forming a photoresist layer on the conducting layer; arranging a photo mask above the photoresist layer, wherein the photoresist layer comprises a data line pattern, a source electrode pattern and a drain electrode pattern, a first width (W1) is reserved between the source electrode pattern and the drain electrode pattern, the data line pattern has a second width (W2), the first width (W1) and the second width (W2) meet the conditional that if W1-1(um), then W2+a(um), and a is larger than 0.3 and less than 0.7; carrying out an exposure program and a development program to pattern the photoresist layer by utilizing the photo mask; and patterning th</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110112&amp;DB=EPODOC&amp;CC=CN&amp;NR=101944487A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20110112&amp;DB=EPODOC&amp;CC=CN&amp;NR=101944487A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WU HUANGJUN</creatorcontrib><creatorcontrib>ZENG XIANKAI</creatorcontrib><title>Thin film transistor, production method thereof and pixel structure</title><description>The invention relates to a thin film transistor, a production method thereof and a pixel structure. The production method comprises the steps of providing a base plate, wherein a grid electrode, an insulating layer and a channel layer are formed on the base plate, and a conducting layer is formed on the base plate to cover the channel layer and the insulating layer; forming a photoresist layer on the conducting layer; arranging a photo mask above the photoresist layer, wherein the photoresist layer comprises a data line pattern, a source electrode pattern and a drain electrode pattern, a first width (W1) is reserved between the source electrode pattern and the drain electrode pattern, the data line pattern has a second width (W2), the first width (W1) and the second width (W2) meet the conditional that if W1-1(um), then W2+a(um), and a is larger than 0.3 and less than 0.7; carrying out an exposure program and a development program to pattern the photoresist layer by utilizing the photo mask; and patterning th</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQANAsDqL-w7krWAxYRwmKk1P3EpoLCaR34XIFP18HP8DpLW9t3JAyQcxlBhVPLTdlOUAVDsukmQlm1MQBNKEgR_AUoOY3Fmgq37IIbs0q-tJw93Nj9o_74J5HrDxiq35CQh3dqzt1V2ttf7md_zkfraIy8Q</recordid><startdate>20110112</startdate><enddate>20110112</enddate><creator>WU HUANGJUN</creator><creator>ZENG XIANKAI</creator><scope>EVB</scope></search><sort><creationdate>20110112</creationdate><title>Thin film transistor, production method thereof and pixel structure</title><author>WU HUANGJUN ; ZENG XIANKAI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN101944487A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>WU HUANGJUN</creatorcontrib><creatorcontrib>ZENG XIANKAI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WU HUANGJUN</au><au>ZENG XIANKAI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Thin film transistor, production method thereof and pixel structure</title><date>2011-01-12</date><risdate>2011</risdate><abstract>The invention relates to a thin film transistor, a production method thereof and a pixel structure. The production method comprises the steps of providing a base plate, wherein a grid electrode, an insulating layer and a channel layer are formed on the base plate, and a conducting layer is formed on the base plate to cover the channel layer and the insulating layer; forming a photoresist layer on the conducting layer; arranging a photo mask above the photoresist layer, wherein the photoresist layer comprises a data line pattern, a source electrode pattern and a drain electrode pattern, a first width (W1) is reserved between the source electrode pattern and the drain electrode pattern, the data line pattern has a second width (W2), the first width (W1) and the second width (W2) meet the conditional that if W1-1(um), then W2+a(um), and a is larger than 0.3 and less than 0.7; carrying out an exposure program and a development program to pattern the photoresist layer by utilizing the photo mask; and patterning th</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Thin film transistor, production method thereof and pixel structure
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T19%3A19%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=WU%20HUANGJUN&rft.date=2011-01-12&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN101944487A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true