Thin film transistor, production method thereof and pixel structure
The invention relates to a thin film transistor, a production method thereof and a pixel structure. The production method comprises the steps of providing a base plate, wherein a grid electrode, an insulating layer and a channel layer are formed on the base plate, and a conducting layer is formed on...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a thin film transistor, a production method thereof and a pixel structure. The production method comprises the steps of providing a base plate, wherein a grid electrode, an insulating layer and a channel layer are formed on the base plate, and a conducting layer is formed on the base plate to cover the channel layer and the insulating layer; forming a photoresist layer on the conducting layer; arranging a photo mask above the photoresist layer, wherein the photoresist layer comprises a data line pattern, a source electrode pattern and a drain electrode pattern, a first width (W1) is reserved between the source electrode pattern and the drain electrode pattern, the data line pattern has a second width (W2), the first width (W1) and the second width (W2) meet the conditional that if W1-1(um), then W2+a(um), and a is larger than 0.3 and less than 0.7; carrying out an exposure program and a development program to pattern the photoresist layer by utilizing the photo mask; and patterning th |
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