Lithographic method and arrangement

A lithographic method includes exposing a first layer of material to a radiation beam to form a first pattern feature in the first layer, the first pattern feature having sidewalls, and a focal property of the radiation beam being controlled to control a sidewall angle of the sidewalls; providing a second layer of material over the first pattern feature to provide a coating on sidewalls of the first pattern; removing a portion of the second layer, leaving a coating of the second layer of material on sidewalls of the first pattern; removing the first pattern formed from the first layer, leaving on the substrate at least a part of the second layer that formed a coating on sidewalls of that first pattern, the part of the second layer left forming second pattern features in locations adjacent to the locations of sidewalls of the removed first pattern feature.