Superjunction structures for power devices and methods of manufacture

Superjunction structures for power devices and methods of manufacture

In one general aspect, a power device can include an active region having a plurality of pillars of a first conductivity type alternately arranged with a plurality of pillars of a second conductivity type. The power device can include a termination region surrounding at least a portion of the active...

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Bibliographische Detailangaben
Hauptverfasser: KIM YONGSUB, SHENOY PRAVEEN MURALEEDHARAN, REXER CHRISTOPHER L, WANG QI, HIGGS JASON M, RINEHIMER MARK L, LEE JONGHUN, LEE JUNGKIL, KIM CHANGWOOK, YUN CHONGMAN, YEDINAK JOSEPH A, JUNG JINYOUNG, LEE JAEGIL, SHARP JOELLE, REICHL DWAYNE S, JANG HOCHEOL
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In one general aspect, a power device can include an active region having a plurality of pillars of a first conductivity type alternately arranged with a plurality of pillars of a second conductivity type. The power device can include a termination region surrounding at least a portion of the active region and can have a plurality of pillars of the first conductivity type alternately arranged with a plurality of pillars of the second conductivity type. Each of the plurality of pillars of the first conductivity type in the active region and the termination region can be defined by a trench. The power device can include an enrichment region at a bottom portion of one of the plurality of pillars of the first conductivity type in the active region.