Substrate for semiconductor device, semiconductor device and manufacturing method thereof

The invention provides a substrate for a semiconductor device, a semiconductor device, a manufacturing method for the substrate and a manufacturing method for the semiconductor device, which can promote the binding force between a metal layer and a sealing resin, form flat electrodes with same sizes in horizontal direction and can completely deal with micronization. The manufacturing method for the substrate comprises the steps of forming a resist layer on a surface of a conductive substrate, exposing the resist layer using a glass mask with a mask pattern, developing the resist layer for forming resist patterns on the substrate, electroplating the exposed part of the substrate so as to form the metal layer and removing the resisting agent on the resist patterns.