Treatment method of silicon chip edge

The invention discloses a treatment method of a silicon chip edge. The method comprises the following steps of: taking a silicon chip as an electrochemical reaction anode and graphite as an electrochemical reaction cathode by utilizing an electrochemical reaction principle, conducting the anode and the cathode by an acid solution, and carrying out sustained reaction for a certain time at appropriate voltage and electric current, wherein the reaction speed of a convex part on the silicon chip is greater than that of a concave part thereof under the action of electric current and on the basis of a point discharge principle, the roughness of the chamfer surface at the edge of the silicon chip is reduced after the reaction time is set, and the grinding wheel grain is improved; when the removal rate on the chamfer surface at the edge of the silicon chip reaches more than 10 micrometers, the grinding wheel grain on the chamfer surface is remarkably lightened, the roughness is reduced, and asimilar mirror effect is