Method for the preparation of high purity silicon

A method of forming high-purity elemental silicon is disclosed. The method includes the step of heating a silica gel composition, or an intermediate composition derived from a silica gel composition, wherein the silica gel composition or intermediate composition includes at least about 5% by weight...

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Bibliographische Detailangaben
Hauptverfasser:	LEMAN JOHN THOMAS, MENDICINO FRANK DOMINIC, MCNULTY THOMAS FRANCIS, LOU VICTOR LIENKONG, HEINRICH VAN DONGEREN JOHAN, LEWIS LARRY NEIL, D. EVELYN MARK PHILIP, SHUBA ROMAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method of forming high-purity elemental silicon is disclosed. The method includes the step of heating a silica gel composition, or an intermediate composition derived from a silica gel composition, wherein the silica gel composition or intermediate composition includes at least about 5% by weight carbon, and the heating temperature is above about 1550 DEG C. The heating step results in the production of a product which includes elemental silicon. Another aspect of the invention relates to a method for making a photovoltaic cell. The method includes the step of forming a semiconductor substrate from elemental silicon prepared as described in this disclosure. Additional steps are then undertaken to fabricate the photovoltaic device.