Methods for normalizing strain in semiconductor devices and strain normalized semiconductor devices
A method of normalizing strain in semiconductor devices and normalized strain semiconductor devices. The method includes: forming first and second field effect transistors of an integrated circuit; forming a stress layer over the first and second field effect transistors, the stress layer inducing s...
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| creator | ELLIS-MONAGHAN JOHN JOSEPH BERNSTEIN KERRY HABIB NAZMUL BALCH BRUCE |
| description | A method of normalizing strain in semiconductor devices and normalized strain semiconductor devices. The method includes: forming first and second field effect transistors of an integrated circuit; forming a stress layer over the first and second field effect transistors, the stress layer inducing strain in channel regions of the first and second field effect transistors; and selectively thinning the stress layer over at least a portion of the second field effect transistor. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Methods for normalizing strain in semiconductor devices and strain normalized semiconductor devices |
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