Methods for normalizing strain in semiconductor devices and strain normalized semiconductor devices

Methods for normalizing strain in semiconductor devices and strain normalized semiconductor devices

A method of normalizing strain in semiconductor devices and normalized strain semiconductor devices. The method includes: forming first and second field effect transistors of an integrated circuit; forming a stress layer over the first and second field effect transistors, the stress layer inducing s...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ELLIS-MONAGHAN JOHN JOSEPH, BERNSTEIN KERRY, HABIB NAZMUL, BALCH BRUCE
Format: Patent
Sprache:chi ; eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of normalizing strain in semiconductor devices and normalized strain semiconductor devices. The method includes: forming first and second field effect transistors of an integrated circuit; forming a stress layer over the first and second field effect transistors, the stress layer inducing strain in channel regions of the first and second field effect transistors; and selectively thinning the stress layer over at least a portion of the second field effect transistor.