Iii nitride semiconductor light emitting element

A III nitride semiconductor light emitting element is provided with a substrate (1) and a light emitting layer (10) having a multiquantum well structure. The multiquantum well structure is provided with barrier layers (11b, 12b) composed of a III nitride semiconductor arranged on the surface of the substrate and well layers (11a, 12a) composed of an indium containing III nitride semiconductor. Inthe light emitting layer, one unit multilayer section (11m) composed of the well layer and the barrier layer is arranged or a plurality of multilayer sections (11, 12) wherein two or more unit multilayer sections (12m) are laminated. When the multilayer section (12) has two or more unit multilayer sections (12m), the layer thickness and composition of the well layers and those of the barrier layers are identical to each other. As for the multilayer sections (11, 12), the barrier layers (11b, 12b) of the unit multilayer sections have different layer thicknesses. Thus, multiwavelength light is easily outputted with the