Homeotropic alignment type pixel structure and manufacturing method thereof
The invention relates to a homeotropic alignment type pixel structure and a manufacturing method thereof. The pixel structure comprises a gate, a gate insulation layer, a gate amorphous silicon area, a source metal area, a drain metal area, an organic matter protective layer, a conducting layer and...
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| creator | LAN ZHIJIE |
| description | The invention relates to a homeotropic alignment type pixel structure and a manufacturing method thereof. The pixel structure comprises a gate, a gate insulation layer, a gate amorphous silicon area, a source metal area, a drain metal area, an organic matter protective layer, a conducting layer and slits, wherein the gate is formed on a base plate; the gate insulation layer covers on the gate; the gate amorphous silicon area is formed on the gate insulation layer and is correspondingly positioned above the gate; the source metal area and the drain metal area are formed on the gate amorphous silicon area; the organic matter protective layer is formed on the gate insulation layer and covers on the source metal area and the drain metal area and comprises a dielectric layer hole and a plurality of bulges, and the dielectric layer hole exposes the partial surface of the drain metal area; the conducting layer is formed on the organic matter protective layer and covers on the dielectric layer hole; and the slits are |
| format | Patent |
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The pixel structure comprises a gate, a gate insulation layer, a gate amorphous silicon area, a source metal area, a drain metal area, an organic matter protective layer, a conducting layer and slits, wherein the gate is formed on a base plate; the gate insulation layer covers on the gate; the gate amorphous silicon area is formed on the gate insulation layer and is correspondingly positioned above the gate; the source metal area and the drain metal area are formed on the gate amorphous silicon area; the organic matter protective layer is formed on the gate insulation layer and covers on the source metal area and the drain metal area and comprises a dielectric layer hole and a plurality of bulges, and the dielectric layer hole exposes the partial surface of the drain metal area; the conducting layer is formed on the organic matter protective layer and covers on the dielectric layer hole; and the slits are</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FREQUENCY-CHANGING ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; SEMICONDUCTOR DEVICES ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100908&DB=EPODOC&CC=CN&NR=101826530A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20100908&DB=EPODOC&CC=CN&NR=101826530A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LAN ZHIJIE</creatorcontrib><title>Homeotropic alignment type pixel structure and manufacturing method thereof</title><description>The invention relates to a homeotropic alignment type pixel structure and a manufacturing method thereof. 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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF |
| title | Homeotropic alignment type pixel structure and manufacturing method thereof |
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