Homeotropic alignment type pixel structure and manufacturing method thereof
The invention relates to a homeotropic alignment type pixel structure and a manufacturing method thereof. The pixel structure comprises a gate, a gate insulation layer, a gate amorphous silicon area, a source metal area, a drain metal area, an organic matter protective layer, a conducting layer and...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a homeotropic alignment type pixel structure and a manufacturing method thereof. The pixel structure comprises a gate, a gate insulation layer, a gate amorphous silicon area, a source metal area, a drain metal area, an organic matter protective layer, a conducting layer and slits, wherein the gate is formed on a base plate; the gate insulation layer covers on the gate; the gate amorphous silicon area is formed on the gate insulation layer and is correspondingly positioned above the gate; the source metal area and the drain metal area are formed on the gate amorphous silicon area; the organic matter protective layer is formed on the gate insulation layer and covers on the source metal area and the drain metal area and comprises a dielectric layer hole and a plurality of bulges, and the dielectric layer hole exposes the partial surface of the drain metal area; the conducting layer is formed on the organic matter protective layer and covers on the dielectric layer hole; and the slits are |
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