AlGaInP system LED with electron hole dual limitation and preparation method thereof

The invention provides an AlGaInP system LED with the electron hole dual limitation and a preparation method thereof. An upper electrode, an ITO conductive light transmission layer, a GaP window layer, an upper limiting layer, an active region, a lower limiting layer, a Bragg reflecting layer, a buffer layer, a substrate and a lower electrode vertically and sequentially grow in a laminated way on a chip structure of the LED from top to bottom, wherein the ITO conductive light transmission layer extends from the GaP window layer to the upper surface of the upper limiting layer, and both sides of the Bragg reflecting layer are provided with oxidizing insulation regions. The preparation method comprises the following steps: (1) growing epitaxial materials; (2) etching current baffle regions; (3) carrying out vapor deposition on ITO transparent conductive films; (4) manufacturing the upper electrode and the lower electrode; (5) carrying out oxidization; and (6) separating pipe cores and carrying out encapsulation