Method for forming pixel structure

The invention discloses a method for forming a pixel structure. The method utilizes a first conducting layer for forming a scanning wire and data wire section, utilizes a second conducting layer for forming a source electrode, a drain electrode and a common electrode, and also utilizes a transparent...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	WU ZHOUQIN, CHEN YIJUN, SHI MINGHONG, WAN RENWEN, LIU ZHUYU
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEMICONDUCTOR DEVICES TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	The invention discloses a method for forming a pixel structure. The method utilizes a first conducting layer for forming a scanning wire and data wire section, utilizes a second conducting layer for forming a source electrode, a drain electrode and a common electrode, and also utilizes a transparent conducting layer for forming a pixel electrode and a connecting layer, wherein the common electrode is partially overlapped on the scanning wire and the data wire section, and the connecting layer is electrically connected with the source electrode and the data wire section through an opening of adielectric layer. Thereby, the invention can manufacture the pixel structure with a shield positioned above the data wire only by utilizing five optical masks, so the open rate of the pixel structurecan be greatly improved.