Method for the treatment of a semiconductor wafer

The present invention relates to a method for the treatment of a semiconductor wafer (5). Semiconductor wafers (5) are treated in a liquid container (11) filled at least partly with a solution (91) containing hydrogen fluoride, such that surface oxide dissolves, are transported out of the solution (91) along a transport direction (81) and dried, and are then treated with an ozone-containing gas (93) to oxidize the surface of the semiconductor wafer (5), wherein part of the semiconductor wafer surface (5) comes into contact with the ozone-containing gas (93) while another part of the surface is still in contact with the solution (91), and wherein the solution (91) and the ozone-containing gas (93) are spatially separated such that they do not come into contact with one another.