Surface treatment method of group III nitride semiconductor, group III nitride semiconductor and manufacturing method thereof, group III nitride semiconductor structure

Surface treatment method of group III nitride semiconductor, group III nitride semiconductor and manufacturing method thereof, group III nitride semiconductor structure

There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LEE SI HYUK, LEE SANG BUM, YANG JONG IN, SONG SANG YEOB, KIM TAE HYUNG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.