Film bulk acoustic resonator structure with single-layer electrodes and manufacturing method thereof
The invention discloses a film bulk acoustic resonator structure with single-layer electrodes and a manufacturing method thereof, and belongs to the field of resonator devices. A substrate is provided with a piezoelectric film; an acoustic wave reflecting layer has a Bragg reflection structure or an...
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| creator | ZHAO SHIHENG YANG YI PENG PINGGANG ZHOU CHANGJIAN DONG SHURONG REN TIANLING |
| description | The invention discloses a film bulk acoustic resonator structure with single-layer electrodes and a manufacturing method thereof, and belongs to the field of resonator devices. A substrate is provided with a piezoelectric film; an acoustic wave reflecting layer has a Bragg reflection structure or an air gap structure, and is formed in the substrate or between the substrate and the piezoelectric film; and the single-layer electrodes consisting of two separate electrodes are formed on the piezoelectric film through etching. The film bulk acoustic resonator structure with the single-layer electrodes can be compatible with the prior super-large-scale integrated circuit process, and is easy for chip-scale integration and large-scale production; and compared with the prior acoustic resonator structure, the film bulk acoustic resonator structure is only provided with the single-layer electrodes, and has simple structure, so that a preparation process is simple, the cost is reduced, and the film bulk acoustic resonat |
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A substrate is provided with a piezoelectric film; an acoustic wave reflecting layer has a Bragg reflection structure or an air gap structure, and is formed in the substrate or between the substrate and the piezoelectric film; and the single-layer electrodes consisting of two separate electrodes are formed on the piezoelectric film through etching. The film bulk acoustic resonator structure with the single-layer electrodes can be compatible with the prior super-large-scale integrated circuit process, and is easy for chip-scale integration and large-scale production; and compared with the prior acoustic resonator structure, the film bulk acoustic resonator structure is only provided with the single-layer electrodes, and has simple structure, so that a preparation process is simple, the cost is reduced, and the film bulk acoustic resonat</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRICITY</subject><subject>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</subject><subject>RESONATORS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyrEKwjAQBuAuDqK-w_kAhVqh4CjF4uTkXs7krw2mSblcEN9eBR_A6Vu-ZWE75ye6Zf8gNjEndYYEKQbWKJRUstEsoKfTkZILd4_S8wtC8DAq0SIRB0sThzzwN38STdAxWtIRgjisi8XAPmHzc1Vsu9O1PZeYY480s0GA9u1lV-2aQ91U9XH_z3kDYx4_xw</recordid><startdate>20100407</startdate><enddate>20100407</enddate><creator>ZHAO SHIHENG</creator><creator>YANG YI</creator><creator>PENG PINGGANG</creator><creator>ZHOU CHANGJIAN</creator><creator>DONG SHURONG</creator><creator>REN TIANLING</creator><scope>EVB</scope></search><sort><creationdate>20100407</creationdate><title>Film bulk acoustic resonator structure with single-layer electrodes and manufacturing method thereof</title><author>ZHAO SHIHENG ; YANG YI ; PENG PINGGANG ; ZHOU CHANGJIAN ; DONG SHURONG ; REN TIANLING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN101692602A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2010</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRICITY</topic><topic>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</topic><topic>RESONATORS</topic><toplevel>online_resources</toplevel><creatorcontrib>ZHAO SHIHENG</creatorcontrib><creatorcontrib>YANG YI</creatorcontrib><creatorcontrib>PENG PINGGANG</creatorcontrib><creatorcontrib>ZHOU CHANGJIAN</creatorcontrib><creatorcontrib>DONG SHURONG</creatorcontrib><creatorcontrib>REN TIANLING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ZHAO SHIHENG</au><au>YANG YI</au><au>PENG PINGGANG</au><au>ZHOU CHANGJIAN</au><au>DONG SHURONG</au><au>REN TIANLING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Film bulk acoustic resonator structure with single-layer electrodes and manufacturing method thereof</title><date>2010-04-07</date><risdate>2010</risdate><abstract>The invention discloses a film bulk acoustic resonator structure with single-layer electrodes and a manufacturing method thereof, and belongs to the field of resonator devices. A substrate is provided with a piezoelectric film; an acoustic wave reflecting layer has a Bragg reflection structure or an air gap structure, and is formed in the substrate or between the substrate and the piezoelectric film; and the single-layer electrodes consisting of two separate electrodes are formed on the piezoelectric film through etching. The film bulk acoustic resonator structure with the single-layer electrodes can be compatible with the prior super-large-scale integrated circuit process, and is easy for chip-scale integration and large-scale production; and compared with the prior acoustic resonator structure, the film bulk acoustic resonator structure is only provided with the single-layer electrodes, and has simple structure, so that a preparation process is simple, the cost is reduced, and the film bulk acoustic resonat</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRONIC CIRCUITRY ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS |
| title | Film bulk acoustic resonator structure with single-layer electrodes and manufacturing method thereof |
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