Film bulk acoustic resonator structure with single-layer electrodes and manufacturing method thereof

The invention discloses a film bulk acoustic resonator structure with single-layer electrodes and a manufacturing method thereof, and belongs to the field of resonator devices. A substrate is provided with a piezoelectric film; an acoustic wave reflecting layer has a Bragg reflection structure or an...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ZHAO SHIHENG, YANG YI, PENG PINGGANG, ZHOU CHANGJIAN, DONG SHURONG, REN TIANLING
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention discloses a film bulk acoustic resonator structure with single-layer electrodes and a manufacturing method thereof, and belongs to the field of resonator devices. A substrate is provided with a piezoelectric film; an acoustic wave reflecting layer has a Bragg reflection structure or an air gap structure, and is formed in the substrate or between the substrate and the piezoelectric film; and the single-layer electrodes consisting of two separate electrodes are formed on the piezoelectric film through etching. The film bulk acoustic resonator structure with the single-layer electrodes can be compatible with the prior super-large-scale integrated circuit process, and is easy for chip-scale integration and large-scale production; and compared with the prior acoustic resonator structure, the film bulk acoustic resonator structure is only provided with the single-layer electrodes, and has simple structure, so that a preparation process is simple, the cost is reduced, and the film bulk acoustic resonat