Method for improving open circuit voltage of amorphous silicon thin film solar cell

The invention discloses a method for improving open circuit voltage of an amorphous silicon thin film solar cell. The method comprises that: an N type layer, an intrinsic layer and a P type layer are grown in sequence on an opaque substrate by adopting plasma assisted chemical vapor deposition technology, wherein the P type layer is divided into a P layer and a P layer; when the P layer is grown, the growing time of the P layer is prolonged for t seconds; after the growth of the P layer is completed, flow, temperature and glow power of hydrogen are not changed, the P layer is etched for t seconds by adopting a hydrogen plasma etching method, and the P layer is grown; and after the cell is taken out from a reacting chamber, an ITO transparent electrode is grown by magnetron sputtering. The method has simple and easy treatment process, not only can effectively improve the open circuit voltage of the amorphous silicon thin film solar cell to obtain the amorphous silicon thin film solar cell with large area