Preparation method of selenide material for absorbing layer of thin film solar cell
The invention relates to a preparation method of selenide material for the absorbing layer of a thin film solar cell and the selenide material is Cu2Sex and M2Sey, wherein M is one element of Al, In and Ga, x is 0.95-1.05, y is 2.8-3.2 and selenide material is powdered or block target material. The...
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| creator | HUANG XIAOKE WU XIANGWU WANG YUMIN LIAO CHUNTU SU JIAHONG CHEN JINZHONG LU HONG HE HUANQUAN XIE YUANFENG |
| description | The invention relates to a preparation method of selenide material for the absorbing layer of a thin film solar cell and the selenide material is Cu2Sex and M2Sey, wherein M is one element of Al, In and Ga, x is 0.95-1.05, y is 2.8-3.2 and selenide material is powdered or block target material. The preparation method comprises the following steps: placing a sealed vacuum container or a container filled with argon or nitrogen with the pressure of less than normal pressure in a furnace to perform gradient temperature-elevating and temperature-keeping in a defined heating rate, performing liquidphase cooling to synthesize bulk material after stage temperature-keeping, crushing the bulk material to obtain the desired powder and finally synthesizing the desired bulk target in a hot pressing furnace. The method is a pure element method liquid-phase synthesis technology and has the advantage of wide applicability, accurate proportioning and low cost; the prepared target has high quality andthe consistencies of the p |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN101645473BB</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN101645473BB</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN101645473BB3</originalsourceid><addsrcrecordid>eNqNyjEKwkAQBdA0FqLeYbAXDInaJyhWImgfJslfszC7E2a38fYieACr17xl8bgbZjbOXiMF5ElHUkcJguhHUOAM8yzk1Ij7pNb7-CLhN-wb8-QjOS-BkgobDRBZFwvHkrD5uSq2l_Ozve4wa4c084CI3LW3cl8e60N9qpqm-it9AL40OL8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Preparation method of selenide material for absorbing layer of thin film solar cell</title><source>esp@cenet</source><creator>HUANG XIAOKE ; WU XIANGWU ; WANG YUMIN ; LIAO CHUNTU ; SU JIAHONG ; CHEN JINZHONG ; LU HONG ; HE HUANQUAN ; XIE YUANFENG</creator><creatorcontrib>HUANG XIAOKE ; WU XIANGWU ; WANG YUMIN ; LIAO CHUNTU ; SU JIAHONG ; CHEN JINZHONG ; LU HONG ; HE HUANQUAN ; XIE YUANFENG</creatorcontrib><description>The invention relates to a preparation method of selenide material for the absorbing layer of a thin film solar cell and the selenide material is Cu2Sex and M2Sey, wherein M is one element of Al, In and Ga, x is 0.95-1.05, y is 2.8-3.2 and selenide material is powdered or block target material. The preparation method comprises the following steps: placing a sealed vacuum container or a container filled with argon or nitrogen with the pressure of less than normal pressure in a furnace to perform gradient temperature-elevating and temperature-keeping in a defined heating rate, performing liquidphase cooling to synthesize bulk material after stage temperature-keeping, crushing the bulk material to obtain the desired powder and finally synthesizing the desired bulk target in a hot pressing furnace. The method is a pure element method liquid-phase synthesis technology and has the advantage of wide applicability, accurate proportioning and low cost; the prepared target has high quality andthe consistencies of the p</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; SEMICONDUCTOR DEVICES ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110105&DB=EPODOC&CC=CN&NR=101645473B$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110105&DB=EPODOC&CC=CN&NR=101645473B$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HUANG XIAOKE</creatorcontrib><creatorcontrib>WU XIANGWU</creatorcontrib><creatorcontrib>WANG YUMIN</creatorcontrib><creatorcontrib>LIAO CHUNTU</creatorcontrib><creatorcontrib>SU JIAHONG</creatorcontrib><creatorcontrib>CHEN JINZHONG</creatorcontrib><creatorcontrib>LU HONG</creatorcontrib><creatorcontrib>HE HUANQUAN</creatorcontrib><creatorcontrib>XIE YUANFENG</creatorcontrib><title>Preparation method of selenide material for absorbing layer of thin film solar cell</title><description>The invention relates to a preparation method of selenide material for the absorbing layer of a thin film solar cell and the selenide material is Cu2Sex and M2Sey, wherein M is one element of Al, In and Ga, x is 0.95-1.05, y is 2.8-3.2 and selenide material is powdered or block target material. The preparation method comprises the following steps: placing a sealed vacuum container or a container filled with argon or nitrogen with the pressure of less than normal pressure in a furnace to perform gradient temperature-elevating and temperature-keeping in a defined heating rate, performing liquidphase cooling to synthesize bulk material after stage temperature-keeping, crushing the bulk material to obtain the desired powder and finally synthesizing the desired bulk target in a hot pressing furnace. The method is a pure element method liquid-phase synthesis technology and has the advantage of wide applicability, accurate proportioning and low cost; the prepared target has high quality andthe consistencies of the p</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</subject><subject>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</subject><subject>TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjEKwkAQBdA0FqLeYbAXDInaJyhWImgfJslfszC7E2a38fYieACr17xl8bgbZjbOXiMF5ElHUkcJguhHUOAM8yzk1Ij7pNb7-CLhN-wb8-QjOS-BkgobDRBZFwvHkrD5uSq2l_Ozve4wa4c084CI3LW3cl8e60N9qpqm-it9AL40OL8</recordid><startdate>20110105</startdate><enddate>20110105</enddate><creator>HUANG XIAOKE</creator><creator>WU XIANGWU</creator><creator>WANG YUMIN</creator><creator>LIAO CHUNTU</creator><creator>SU JIAHONG</creator><creator>CHEN JINZHONG</creator><creator>LU HONG</creator><creator>HE HUANQUAN</creator><creator>XIE YUANFENG</creator><scope>EVB</scope></search><sort><creationdate>20110105</creationdate><title>Preparation method of selenide material for absorbing layer of thin film solar cell</title><author>HUANG XIAOKE ; WU XIANGWU ; WANG YUMIN ; LIAO CHUNTU ; SU JIAHONG ; CHEN JINZHONG ; LU HONG ; HE HUANQUAN ; XIE YUANFENG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN101645473BB3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</topic><topic>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</topic><topic>TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</topic><toplevel>online_resources</toplevel><creatorcontrib>HUANG XIAOKE</creatorcontrib><creatorcontrib>WU XIANGWU</creatorcontrib><creatorcontrib>WANG YUMIN</creatorcontrib><creatorcontrib>LIAO CHUNTU</creatorcontrib><creatorcontrib>SU JIAHONG</creatorcontrib><creatorcontrib>CHEN JINZHONG</creatorcontrib><creatorcontrib>LU HONG</creatorcontrib><creatorcontrib>HE HUANQUAN</creatorcontrib><creatorcontrib>XIE YUANFENG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HUANG XIAOKE</au><au>WU XIANGWU</au><au>WANG YUMIN</au><au>LIAO CHUNTU</au><au>SU JIAHONG</au><au>CHEN JINZHONG</au><au>LU HONG</au><au>HE HUANQUAN</au><au>XIE YUANFENG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Preparation method of selenide material for absorbing layer of thin film solar cell</title><date>2011-01-05</date><risdate>2011</risdate><abstract>The invention relates to a preparation method of selenide material for the absorbing layer of a thin film solar cell and the selenide material is Cu2Sex and M2Sey, wherein M is one element of Al, In and Ga, x is 0.95-1.05, y is 2.8-3.2 and selenide material is powdered or block target material. The preparation method comprises the following steps: placing a sealed vacuum container or a container filled with argon or nitrogen with the pressure of less than normal pressure in a furnace to perform gradient temperature-elevating and temperature-keeping in a defined heating rate, performing liquidphase cooling to synthesize bulk material after stage temperature-keeping, crushing the bulk material to obtain the desired powder and finally synthesizing the desired bulk target in a hot pressing furnace. The method is a pure element method liquid-phase synthesis technology and has the advantage of wide applicability, accurate proportioning and low cost; the prepared target has high quality andthe consistencies of the p</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE |
| title | Preparation method of selenide material for absorbing layer of thin film solar cell |
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