Preparation method of selenide material for absorbing layer of thin film solar cell

The invention relates to a preparation method of selenide material for the absorbing layer of a thin film solar cell and the selenide material is Cu2Sex and M2Sey, wherein M is one element of Al, In and Ga, x is 0.95-1.05, y is 2.8-3.2 and selenide material is powdered or block target material. The preparation method comprises the following steps: placing a sealed vacuum container or a container filled with argon or nitrogen with the pressure of less than normal pressure in a furnace to perform gradient temperature-elevating and temperature-keeping in a defined heating rate, performing liquidphase cooling to synthesize bulk material after stage temperature-keeping, crushing the bulk material to obtain the desired powder and finally synthesizing the desired bulk target in a hot pressing furnace. The method is a pure element method liquid-phase synthesis technology and has the advantage of wide applicability, accurate proportioning and low cost; the prepared target has high quality andthe consistencies of the p