Device and process method for filling aluminum into nano through holes by using PVD method

The invention relates to a device and a process method for filling aluminum into nano through holes by using a PVD method, which adopt a radio-frequency power supply and a high-frequency plasma methodof physical vapor deposition (PVD), wherein in a PVD chamber, the radio-frequency power supply is applied to a target material and a wafer respectively, and the Al is filled into the through holes ofa minisize semiconductor chip and becomes a conducting material between semiconductor layers. The device and the process method can overcome the defect that the conventional process can only reach over 0.13 micron, and extend the application of the aluminum to a degree that the characteristic line width is less than or equal to 0.1 mum and the depth-to-width ratio (h/CD) is more than or equal to6. The device and the process method reduce the device running temperature, save water, electricity and consumptive materials, greatly improve the utilization rate of production facilities and the wafer yield, can be applied to