Micro structural manufacture method capable of integrating semiconductor processing

The invention discloses a micro structural manufacture method capable of integrating semiconductor processing, comprising the following steps of generating an insulating layer on the surface of a silica-based layer, and the insulating layer is provided with at least one mutually-independent micro structures and a plurality of metal circuits; etching the micro structures and the metal circuits coated by the insulating layer, generating one metal connecting layer electrically connected with the metal circuits and an outer conductor on insulating layer; exposing the metal connecting layer out ofthe surface of the insulating layer to be coated by a protection layer for etching; and avoiding the micro structures and the metal connecting layer from being eroded and damaged by etchant.