Wide-bandgap semiconductor devices and the device manufacture method
The invention discloses a wide-bandgap semiconductor device. A device (100) comprising a substrate (115) having crystal-support-structures (110) thereon, and a III-V crystal (210). The III-V crystal is on a single contact region (140) of one of the crystal-support-structures. An area of the contact...
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| creator | NG HOCK VYAS BRIJESH FRAHM ROBERT EUGENE |
| description | The invention discloses a wide-bandgap semiconductor device. A device (100) comprising a substrate (115) having crystal-support-structures (110) thereon, and a III-V crystal (210). The III-V crystal is on a single contact region (140) of one of the crystal-support-structures. An area of the contact region is no more than about 50 percent of a surface area (320) of the III-V crystal. |
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A device (100) comprising a substrate (115) having crystal-support-structures (110) thereon, and a III-V crystal (210). The III-V crystal is on a single contact region (140) of one of the crystal-support-structures. 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| language | chi ; eng |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | Wide-bandgap semiconductor devices and the device manufacture method |
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