Wide-bandgap semiconductor devices and the device manufacture method

The invention discloses a wide-bandgap semiconductor device. A device (100) comprising a substrate (115) having crystal-support-structures (110) thereon, and a III-V crystal (210). The III-V crystal is on a single contact region (140) of one of the crystal-support-structures. An area of the contact...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	NG HOCK, VYAS BRIJESH, FRAHM ROBERT EUGENE
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The invention discloses a wide-bandgap semiconductor device. A device (100) comprising a substrate (115) having crystal-support-structures (110) thereon, and a III-V crystal (210). The III-V crystal is on a single contact region (140) of one of the crystal-support-structures. An area of the contact region is no more than about 50 percent of a surface area (320) of the III-V crystal.