Method for manufacturing thin film semiconductor structure

The present invention discloses a method for manufacturing thin film GaN base semiconductor structure. According to an embodiment of the present invention, the method comprises: providing a sapphire substrate; forming one or a plurality of semiconductor layers on the sapphire substrate in order; etc...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CAI YONG, CHEN JIAHUA, CHU HONGSHEN, ZHENG SHENGHAI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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