Method for manufacturing thin film semiconductor structure

The present invention discloses a method for manufacturing thin film GaN base semiconductor structure. According to an embodiment of the present invention, the method comprises: providing a sapphire substrate; forming one or a plurality of semiconductor layers on the sapphire substrate in order; etching one pattern on the one or a plurality of semiconductor layers; depositing a dielectric layer; forming a photoresist on parts of the dielectric layers; depositing parts of the dielectric layer on one or a plurality of semiconductor layers; depositing a base coating; removing a photoresist layer and removing the base coating on the photoresistl depositing a superhard material which is formed on the pattern; removing the sapphire substrate. Accordingly, the superhard material can be selectively deposited on an area desired for the superhard material, then, the GaN base lighting device of vertical structure can be formed by cutting the semiconductor structure.