Semiconductor element and manufacturing method thereof
The invention relates to a manufacturing method of a semiconductor element, which comprises the following steps: firstly, forming a gate structure on a base; then carrying out primary doping and primary strain atom injection technology; forming a clearance wall of a side wall of the gate structure;...
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| Hauptverfasser: | , , |
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| Format: | Patent |
| Sprache: | chi ; eng |
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| Zusammenfassung: | The invention relates to a manufacturing method of a semiconductor element, which comprises the following steps: firstly, forming a gate structure on a base; then carrying out primary doping and primary strain atom injection technology; forming a clearance wall of a side wall of the gate structure; then carrying out secondary doping and secondary strain atom injection technology; and carrying outsolid epitaxy tempering technology to form a source region and a drain region of a semiconductor compound solid epitaxy layer structure. |
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