Integrated optoelectronic device based on sideband injection locking and used for generating high-frequency microwaves

The invention provides an integrated optoelectronic device based on sideband injection locking and used for generating high-frequency microwaves, belonging to the technical field of optoelectronic device preparation of microwave optoelectronics field, particularly relating to an integrated optoelectronic device based on sideband injection locking and used for generating high-frequency microwaves. The integrated optoelectronic device integrates two slave lasers on the same substrate, sequentially extends a lower waveguide layer, a multi-quantum well active layer, a grating layer, an upper waveguide layer, an upper cladding layer and an Ohmic contact layer on the substrate, couples two slave lasers together by a Y branch waveguide or a multi-mode interferometer, thus realizing injection of modulation sideband of external main laser and carrying out injection locking; and heterodyne beat is conducted by the coupling output of the Y branch waveguide or the multi-mode interferometer, thus being capable of obtainin