Integrated circuit capacitor having antireflective dielectric

A capacitor (100) is disclosed that is formed as part of an integrated circuit (IC) fabrication process. The capacitor (100) has conductive top and bottom electrodes (140, 144) and a nonconductive capacitor dielectric (142). In one example, the dielectric (142) includes first and second thin dielect...

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Bibliographische Detailangaben
Hauptverfasser: HU BINGHUA, WOFFORD BILL ALLAN, CHEN XINFEN, PASKER BLAKE RYAN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:A capacitor (100) is disclosed that is formed as part of an integrated circuit (IC) fabrication process. The capacitor (100) has conductive top and bottom electrodes (140, 144) and a nonconductive capacitor dielectric (142). In one example, the dielectric (142) includes first and second thin dielectric layers (112, 114) that sandwich a layer of antireflective material (118). The thin layers (112, 114) provide the dielectric behavior necessary for the capacitor while the antireflective layer (118) promotes reduced feature sizes by mitigating reflected standing waves, among other things.